Breakdown voltage in thin III–V avalanche photodiodes | Zendy

Mohammad A. Saleh | Zendy; Majeed M. Hayat | Zendy; OhHyun Kwon | Zendy; A.L. Holmes | Zendy; Joe C. Campbell | Zendy; Bahaa E. A. Saleh | Zendy; Malvin C. Teich | Zendy

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Breakdown voltage in thin III–V avalanche photodiodes

Author(s) -

Mohammad A. Saleh,

Majeed M. Hayat,

OhHyun Kwon,

A.L. Holmes,

Joe C. Campbell,

Bahaa E. A. Saleh,

Malvin C. Teich

Publication year - 2001

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1425463

Subject(s) - avalanche photodiode , impact ionization , avalanche breakdown , impulse (physics) , breakdown voltage , avalanche diode , ionization , photodiode , voltage , optoelectronics , electron avalanche , multiplication (music) , materials science , zener diode , single photon avalanche diode , electron , atomic physics , physics , optics , quantum mechanics , resistor , ion , detector , acoustics

The dead-space multiplication theory of Hayat and Saleh [J. Lightwave Technol. 10, 1415 (1992)], in conjunction with the multiplication-width-independent ionization-coefficient model developed by Saleh et al. [IEEE Trans. Electron Devices 47, 625 (2000)], are shown to accurately predict breakdown voltages for thin avalanche photodiodes of GaAs, InP, In0.52Al0.48As, and Al0.2Ga0.8As, over a broad range of device widths. The breakdown voltage is determined from the analytical expression for the impulse-response-function decay rate.

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