Observation of narrow-band Si L-edge Čerenkov radiation generated by 5 MeV electrons | Zendy

W. Knulst | Zendy; O.J. Luiten | Zendy; M.J. van der Wiel | Zendy; J. Verhoeven | Zendy

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Observation of narrow-band Si L-edge Čerenkov radiation generated by 5 MeV electrons

Author(s) -

W. Knulst,

O.J. Luiten,

M.J. van der Wiel,

J. Verhoeven

Publication year - 2001

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1415049

Subject(s) - electron , physics , silicon , radiation , atomic physics , photon , cherenkov radiation , foil method , yield (engineering) , refractive index , optics , nuclear physics , materials science , optoelectronics , composite material , detector , thermodynamics

Narrow-band Cerenkov radiation at 99.7 eV has been generated by 5 MeV electrons in a silicon foil, with a yield ∼1×10−3 photon/electron. These measurements demonstrate the feasibility of a compact, narrow-band, and intense soft x-ray source based on small electron accelerators. The observed yield and dependence of the photon spectrum on emission angle are in agreement with theoretical predictions for Cerenkov radiation based on refractive index data of silicon.

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