Open AccessErratum: “Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy” [Appl. Phys. Lett. 79, 1094 (2001)]
Author(s) -
Wei Li,
M. Pessa,
T. Ahlgren,
James Dekker
Publication year - 2001
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1413737
Subject(s) - molecular beam epitaxy , annealing (glass) , luminescence , materials science , optoelectronics , epitaxy , nanotechnology , composite material , layer (electronics)
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