Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors | Zendy

Nobuyuki Sano | Zendy; Masaaki Tomizawa | Zendy

Open Access

Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors

Author(s) -

Nobuyuki Sano,

Masaaki Tomizawa

Publication year - 2001

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1406980

Subject(s) - dopant , materials science , diffusion , threshold voltage , condensed matter physics , range (aeronautics) , semiconductor device , transistor , doping , statistical physics , optoelectronics , voltage , nanotechnology , physics , thermodynamics , quantum mechanics , layer (electronics) , composite material

We investigate the dopant model employed in drift-diffusion device simulations for the study of statistical threshold voltage variations associated with discrete random dopants. It is pointed out that the conventional dopant model, when extended to the extreme "atomistic" regime, becomes physically inconsistent with the length-scale presumed in drift-diffusion simulations. Splitting the Coulomb potential of localized dopants between the long-range and short-range parts, we propose a dopant model appropriate for three-dimensional drift-diffusion simulations

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research