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Tunneling carrier escape from InAs self-assembled quantum dots
Author(s) -
Jordi Ibáñez,
R. León,
Duc Tu Vu,
S. A. Chaparro,
S. R. Johnson,
Carlos Navarro,
Y. H. Zhang
Publication year - 2001
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1402642
Subject(s) - quantum dot , quantum tunnelling , deep level transient spectroscopy , capacitance , optoelectronics , materials science , quantum dot laser , spectroscopy , transient (computer programming) , rectangular potential barrier , condensed matter physics , signal (programming language) , doping , physics , semiconductor , electrode , silicon , semiconductor laser theory , quantum mechanics , computer science , operating system , programming language

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