Predicted maximum mobility in bulk GaN | Zendy

D. C. Look | Zendy; J. R. Sizelove | Zendy

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Predicted maximum mobility in bulk GaN

Author(s) -

D. C. Look,

J. R. Sizelove

Publication year - 2001

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1394954

Subject(s) - electron mobility , acceptor , materials science , wide bandgap semiconductor , scattering , charge carrier density , lattice (music) , hall effect , condensed matter physics , analytical chemistry (journal) , electrical resistivity and conductivity , doping , chemistry , physics , optoelectronics , optics , chromatography , acoustics , quantum mechanics

A 300 K bulk (three-dimensional) mobility of 1245 cm2/V s has been measured in free-standing GaN. Temperature-dependent Hall-effect data on this particular sample are fitted to obtain unknown lattice-scattering parameters, as well as shallow donor (ND) and acceptor (NA) concentrations, which are ND=6.7×1015 and NA=1.7×1015 cm−3. Realistic values of the maximum mobility attainable in bulk GaN are then obtained by assuming two-orders-of-magnitude lower values of ND and NA, leading to a maximum 300 K mobility of 1350 cm2/V s, and a maximum 77 K mobility of 19 200 cm2/V s.

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