Femtosecond response time in beryllium-doped low-temperature-grown GaAs/AlAs multiple quantum wells | Zendy

Tsuyoshi Okuno | Zendy; Yasuaki Masumoto | Zendy; Yasushi Sakuma | Zendy; Yuuichi Hayasaki | Zendy; Hiroshi Okamoto | Zendy

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Femtosecond response time in beryllium-doped low-temperature-grown GaAs/AlAs multiple quantum wells

Author(s) -

Tsuyoshi Okuno,

Yasuaki Masumoto,

Yasushi Sakuma,

Yuuichi Hayasaki,

Hiroshi Okamoto

Publication year - 2001

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1390478

Subject(s) - beryllium , doping , materials science , quantum well , femtosecond , optoelectronics , molecular beam epitaxy , gallium arsenide , epitaxy , saturation (graph theory) , heterojunction , optics , laser , chemistry , nanotechnology , physics , organic chemistry , mathematics , layer (electronics) , combinatorics

We have investigated optical nonlinearity in beryllium-doped low-temperature (LT) molecular-beam-epitaxy-grown GaAs/AlAs multiple quantum wells (MQWs). The response time of the nonlinearity is reduced by Be doping in the MQW. While the undoped LT MQW shows a 0.7–0.9 ps response, the response time of the Be-doped LT MQW is as short as 0.25 ps. The saturation density of the Be-doped MQW is almost the same as that of the undoped MQW, and is smaller than that of bulk GaAs. These results demonstrate that the Be-doped LT MQW exhibits a faster response than the undoped LT MQW, and a faster response as well as larger nonlinearity than LT bulk GaAs

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