Self-limiting atomic-layer deposition of Si on SiO2 by alternate supply of Si2H6 and SiCl4 | Zendy

Shin Yokoyama | Zendy; Kenji Ohba | Zendy; Anri Nakajima | Zendy

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Self-limiting atomic-layer deposition of Si on SiO2 by alternate supply of Si2H6 and SiCl4

Author(s) -

Shin Yokoyama,

Kenji Ohba,

Anri Nakajima

Publication year - 2001

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1389508

Subject(s) - limiting , deposition (geology) , atomic layer deposition , layer (electronics) , substrate (aquarium) , materials science , chemical vapor deposition , surface roughness , surface finish , self limiting , analytical chemistry (journal) , optoelectronics , chemistry , nanotechnology , composite material , environmental chemistry , geology , mechanical engineering , paleontology , oceanography , sediment , engineering , medicine , dermatology

Atomic-layer deposition of Si on SiO2 with a self-limiting growth mode was achieved at substrate temperatures between 355 and 385 °C by means of alternate supply of Si2H6 and SiCl4 gas sources. The growth rate was saturated at 2 ML per cycle at these temperatures and for Si2H6 exposure time over 120 s. The smooth surface (∼0.26 nm in arithmetic average roughness) was obtained under the self-limiting condition irrespective of a film thickness up to 6.5 nm.

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