Open AccessFast 1 kV metal-oxide-semiconductor field-effect transistor switch
Author(s) -
C. J. Dedman,
E. H. Roberts,
S. T. Gibson,
B. R. Lewis
Publication year - 2001
Publication title -
review of scientific instruments
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.605
H-Index - 165
eISSN - 1089-7623
pISSN - 0034-6748
DOI - 10.1063/1.1389488
Subject(s) - materials science , transistor , field effect transistor , optoelectronics , voltage , semiconductor , gating , semiconductor device , electrical engineering , nanotechnology , layer (electronics) , engineering , physiology , biology
A fast, high-voltage switch based on cheap and readily available components is described. This simple circuit can switch 1 kV to ground with a fall time of ∼2.5 ns, and has proved a cost-effective means of driving electrostatic gating and rereferencing devices in pulsed ion-beam experiments.
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