Formation of diluted III–V nitride thin films by N ion implantation | Zendy

K. M. Yu | Zendy; W. Walukiewicz | Zendy; Junqiao Wu | Zendy; Jeffrey W. Beeman | Zendy; Joel W. Ager | Zendy; E. E. Häller | Zendy; Weihua Shan | Zendy; H. P. Xin | Zendy; C. W. Tu | Zendy; M. C. Ridgway | Zendy

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Formation of diluted III–V nitride thin films by N ion implantation

Author(s) -

K. M. Yu,

W. Walukiewicz,

Junqiao Wu,

Jeffrey W. Beeman,

Joel W. Ager,

E. E. Häller,

Weihua Shan,

H. P. Xin,

C. W. Tu,

M. C. Ridgway

Publication year - 2001

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1388860

Subject(s) - ion implantation , materials science , band gap , epitaxy , nitride , nitrogen , analytical chemistry (journal) , wide bandgap semiconductor , ion , molecular beam epitaxy , crystallography , optoelectronics , chemistry , nanotechnology , layer (electronics) , chromatography , organic chemistry

This work was supported by the ‘‘Photovoltaic Materials Focus Area’’ in the DOE Center of Excellence for the Synthesis and Processing of Advanced Materials, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences under U.S. Department of Energy Contract No. DE-ACO3-76SF00098. The work at UCSD was partially supported by Midwest Research Institute under subcontractor No. AAD-9-18668-7 from NREL.

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