Open AccessIn-plane tensile-strained interfacial structure in a GaN nucleation layer on sapphire(0001)
Author(s) -
C. C. Kim,
Jung Ho Je,
M. S. Yi,
Do Young Noh,
P. Ruterana
Publication year - 2001
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1388859
Subject(s) - nucleation , materials science , stacking , sapphire , crystallography , annealing (glass) , transmission electron microscopy , microstructure , ultimate tensile strength , condensed matter physics , molecular physics , composite material , nanotechnology , optics , chemistry , laser , physics , organic chemistry
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