Model for band-edge electroluminescence from metal–oxide–semiconductor silicon tunneling diodes | Zendy

MiinJang Chen | Zendy; Eih-Zhe Liang | Zendy; ShuWei Chang | Zendy; ChingFuh Lin | Zendy

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Model for band-edge electroluminescence from metal–oxide–semiconductor silicon tunneling diodes

Author(s) -

MiinJang Chen,

Eih-Zhe Liang,

ShuWei Chang,

ChingFuh Lin

Publication year - 2001

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1381000

Subject(s) - electroluminescence , quantum tunnelling , materials science , diode , phonon , silicon , optoelectronics , exciton , light emitting diode , semiconductor , condensed matter physics , physics , nanotechnology , layer (electronics)

A detailed model is proposed to explain the electroluminescence spectrum from metal–oxide–silicon tunneling diodes. This model includes phonon-assisted processes and exciton involvement. According to this model, the main peak and the low-energy tail of the electroluminescence spectrum are attributed to the transverse optical phonon and the two-phonon assisted recombination, respectively. With very few fitting parameters, the model accurately predicts the measured electroluminescence spectra.

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