Characterization of near-surface traps in semiconductors: GaN | Zendy

D. C. Look | Zendy; Z.-Q. Fang | Zendy

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Characterization of near-surface traps in semiconductors: GaN

Author(s) -

D. C. Look,

Z.-Q. Fang

Publication year - 2001

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1379982

Subject(s) - deep level transient spectroscopy , semiconductor , materials science , trap (plumbing) , epitaxy , schottky diode , wide bandgap semiconductor , schottky barrier , optoelectronics , spectroscopy , layer (electronics) , condensed matter physics , silicon , nanotechnology , physics , diode , quantum mechanics , meteorology

We present a simple a criterion, based on deep-level transient spectroscopy peak heights S(Vr) at two or more values of reverse bias Vr, to unequivocally determine whether or not a particular semiconductor trap is of bulk or near-surface nature. Moreover, we present an expression for S(Vr) with fitting parameters φB, the Schottky barrier height; δ, the trap penetration depth; and NT, the trap density. Application of the method to a thick, high-quality, epitaxial GaN layer, reveals two common traps which penetrate only 2700±300 A into the layer.

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