Open AccessResponse to “Comment on ‘Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing’ ” [Appl. Phys. Lett. 78, 4043 (2001)]
Author(s) -
Koichi Fukuda,
Kazuo Arai,
S. Suzuki,
Tomoyuki Tanaka
Publication year - 2001
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1379979
Subject(s) - annealing (glass) , materials science , hydrogen , oxide , semiconductor , wide bandgap semiconductor , metal , condensed matter physics , metallurgy , optoelectronics , chemistry , physics , organic chemistry
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