Study of growth hillocks in GaN:Si films by electron beam induced current imaging | Zendy

Manuel Herrera | Zendy; Paloma Fernández | Zendy; J. Piqueras | Zendy

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Study of growth hillocks in GaN:Si films by electron beam induced current imaging

Author(s) -

Manuel Herrera,

Paloma Fernández,

J. Piqueras

Publication year - 2001

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1379773

Subject(s) - hillock , materials science , electron beam induced current , impurity , doping , silicon , electron , optoelectronics , cathode ray , crystallographic defect , condensed matter physics , optics , chemistry , physics , organic chemistry , quantum mechanics , composite material

Remote electron beam induced current (REBIC) measurements have been carried out to investigate electrically active regions in Si doped GaN films. REBIC bright-dark contrast has been observed in the border of growth, round or pyramidal, hillocks, while pyramidal hillocks also show bright contrast at the center. The results are explained by the inhomogeneous distribution of charged point defects and impurities at the hillocks

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