Open AccessMicrocathodoluminescence of impurity doping at gallium nitride/sapphire interfaces
Author(s) -
S. H. Goss,
Xiaoling Sun,
A. P. Young,
L. J. Brillson,
D. C. Look,
R. J. Molnar
Publication year - 2001
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1377858
Subject(s) - cathodoluminescence , materials science , doping , impurity , gallium nitride , sapphire , epitaxy , secondary ion mass spectrometry , optoelectronics , analytical chemistry (journal) , wide bandgap semiconductor , hydride , gallium , ion , luminescence , chemistry , nanotechnology , optics , metal , laser , physics , organic chemistry , layer (electronics) , chromatography , metallurgy
We have used low-temperature cathodoluminescence spectroscopy (CLS) to probe the spatial distribution and energies of electronic defects near GaN/Al2O3 interfaces grown by hydride vapor phase epitaxy (HVPE). Cross sectional secondary electron microscopy CLS shows systematic variations in impurity/defect emissions over a wide range of HVPE GaN/Sapphire electronic properties. These data, along with electrochemical capacitance–voltage profiling and secondary ion mass spectrometry, provide a consistent picture of near-interface doping by O diffusion from Al2O3 into GaN, over a range 100–1000 nm.
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