Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation | Zendy

P. Pellegrino | Zendy; P. Lévêque | Zendy; J. WongLeung | Zendy; C. Jagadish | Zendy; B. G. Svensson | Zendy

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Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation

Author(s) -

P. Pellegrino,

P. Lévêque,

J. WongLeung,

C. Jagadish,

B. G. Svensson

Publication year - 2001

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1374960

Subject(s) - vacancy defect , ion , silicon , ion implantation , materials science , deep level transient spectroscopy , atomic physics , spectroscopy , interstitial defect , carbon fibers , molecular physics , analytical chemistry (journal) , chemistry , crystallography , doping , optoelectronics , physics , organic chemistry , quantum mechanics , chromatography , composite number , composite material

Financial support was kindly provided by the Swedish Research Council for Engineering Sciences (TFR), the Swedish Foundation for International Cooperation in Research and Higher Education (STINT), and the EU Commission, Contract No. ERBFMRXCT980208 (ENDEASD—TMR network).

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