Direct evidence for implanted Fe on substitutional Ga sites in GaN | Zendy

U. Wahl | Zendy; A. Vantomme | Zendy; G. Langouche | Zendy; J. G. Correia | Zendy; L. Peralta | Zendy

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Direct evidence for implanted Fe on substitutional Ga sites in GaN

Author(s) -

U. Wahl,

A. Vantomme,

G. Langouche,

J. G. Correia,

L. Peralta

Publication year - 2001

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1372201

Subject(s) - annealing (glass) , materials science , isotope , hexagonal crystal system , radiochemistry , lattice (music) , wide bandgap semiconductor , crystallography , analytical chemistry (journal) , chemistry , optoelectronics , physics , nuclear physics , metallurgy , chromatography , acoustics

The lattice location of iron in thin-film, single-crystalline hexagonal GaN was studied by means of the emission channeling technique. Following 60-keV room-temperature implantation of the precursor isotope $^{59}$Mn at a dose of 1.0 $\times 10^{13}$ cm$^{-2}$ and annealing up to 900°C, the angular distribution of $\beta^{-}$-particles emitted by the radioactive isotope $^{59}$Fe was measured by a position-sensitive electron detector. The $\beta^{-}$-emission patterns around the [0001], [1102], [1101] and [2113] directions give direct evidence that the majority of Fe (80%) occupies substitutional Ga sites

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