Effect of the density of collision cascades on implantation damage in GaN | Zendy

S. O. Kucheyev | Zendy; J. S. Williams | Zendy; А.И. Титов | Zendy; G. Li | Zendy; C. Jagadish | Zendy

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Effect of the density of collision cascades on implantation damage in GaN

Author(s) -

S. O. Kucheyev,

J. S. Williams,

А.И. Титов,

G. Li,

C. Jagadish

Publication year - 2001

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1369149

Subject(s) - wurtzite crystal structure , ion implantation , collision , ion , materials science , collision cascade , crystallographic defect , lattice (music) , atomic physics , molecular physics , condensed matter physics , chemistry , thin film , physics , sputtering , nanotechnology , computer security , computer science , acoustics , organic chemistry , zinc , metallurgy

Damage accumulation in wurtzite GaN films bombarded with 0.5 MeV Bi1 and 1 MeV Bi2 ions (the so-called molecular effect) is studied by Rutherford backscattering/channeling spectrometry. Results show that an increase in the density of collision cascades dramatically enhances the level of implantation-produced lattice disorder in GaN. This effect is attributed to (i) an increase in the defect clustering efficiency with increasing density of ion-beam-generated point defects and/or (ii) to collective nonlinear energy spike processes. Such a strong influence of the density of collision cascades is important to take into account for a correct estimation of implantation-produced lattice disorder in GaN.

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