Open AccessGrowth, structure, and transport properties of thin (>10 nm) n-type microcrystalline silicon prepared on silicon oxide and its application to single-electron transistor
Author(s) -
Toshio Kamiya,
Kazuyuki NAKAHATA,
Y. T. Tan,
Z. A. K. Durrani,
Isamu Shimizu
Publication year - 2001
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1368164
Subject(s) - materials science , thin film transistor , silicon , amorphous solid , microcrystalline , electron mobility , microstructure , polycrystalline silicon , thin film , crystallography , condensed matter physics , nanotechnology , composite material , optoelectronics , chemistry , layer (electronics) , physics
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