Selectivity of nanocavities and dislocations for gettering of Cu and Fe in silicon | Zendy

B. Stritzker | Zendy; M. Petravić | Zendy; J. WongLeung | Zendy; J. S. Williams | Zendy

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Selectivity of nanocavities and dislocations for gettering of Cu and Fe in silicon

Author(s) -

B. Stritzker,

M. Petravić,

J. WongLeung,

J. S. Williams

Publication year - 2001

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1363689

Subject(s) - getter , vacancy defect , materials science , wafer , silicon , selectivity , ion implantation , ion , metallurgy , optoelectronics , crystallography , chemistry , catalysis , biochemistry , organic chemistry

The selectivity of interstitial-based extended defects (loops) and nanocavities for the gettering of Cu and Fe in Si has been studied. Controlled amounts of Cu and Fe were introduced by ion implantation into wafers containing pre-existing nanocavities and/or dislocations. Results show that Cu has a strong preference for gettering to open volume defects, even when high concentrations of interstitial-based loops are present in close proximity. However, the gettering of Fe in samples containing both vacancy- and interstitial-type defects is more complex, with Fe accumulation at all regions in the sample which contain defects, whether they are vacancy- or interstitial-like in character.

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