Temperature dependent resistance of magnetic tunnel junctions as a quality proof of the barrier
Author(s) -
U. Rüdiger,
Raffaella Calarco,
U. May,
K. Samm,
Jens Hauch,
Harish M. Kittur,
Martin Sperlich,
G. Güntherodt
Publication year - 2001
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1361055
Subject(s) - quantum tunnelling , tunnel magnetoresistance , materials science , magnetoresistance , x ray photoelectron spectroscopy , tunnel junction , tunnel effect , optoelectronics , molecular beam epitaxy , shadow mask , rectangular potential barrier , condensed matter physics , analytical chemistry (journal) , chemistry , nuclear magnetic resonance , epitaxy , nanotechnology , optics , magnetic field , physics , layer (electronics) , quantum mechanics , chromatography
Tunnel junctions of Co(10 nm)/AlOx (nominally 2 nm)/Co(20 nm) have been prepared by molecular beam epitaxy applying a shadow mask technique in conjunction with an UV light-assisted oxidation process of the AlOx barrier. The quality of the AlOx barrier has been proven by x-ray photoelectron spectroscopy and temperature dependent tunneling magnetoresistance (TMR) measurements. Optimum-oxidized tunnel junctions show a TMR of 20% at 285 K and up to 36% at 100 K. At 285 K the TMR values as a function of oxidation time are not symmetric about the optimum time. For underoxidized junctions the TMR is reduced more strongly than for overoxidized junctions. The temperature dependence of the junction’s resistance is a clear and reliable indicator whether pinholes (or imperfections) contribute to the conduction across the barrier.
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