Epitaxial growth of Pb(Zr0.2Ti0.8)O3 on Si and its nanoscale piezoelectric properties | Zendy

Alex M. Lin | Zendy; Xia Hong | Zendy; Vanessa Wood | Zendy; A. Verevkin | Zendy; Charles Ahn | Zendy; R. A. McKee | Zendy; F. J. Walker | Zendy; E. D. Specht | Zendy

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Epitaxial growth of Pb(Zr0.2Ti0.8)O3 on Si and its nanoscale piezoelectric properties

Author(s) -

Alex M. Lin,

Xia Hong,

Vanessa Wood,

A. Verevkin,

Charles Ahn,

R. A. McKee,

F. J. Walker,

E. D. Specht

Publication year - 2001

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1358848

Subject(s) - piezoelectricity , epitaxy , materials science , molecular beam epitaxy , nanoscopic scale , sputter deposition , piezoelectric coefficient , surface roughness , surface finish , optoelectronics , sputtering , piezoresponse force microscopy , condensed matter physics , nanotechnology , layer (electronics) , thin film , composite material , ferroelectricity , dielectric , physics

We have demonstrated a route to epitaxial Pb(Zr0.2Ti0.8)O3 on (001) Si that exhibits a uniform piezoelectric response down to nanoscale levels through the utilization of an insulating, single-crystalline SrTiO3 transition layer. These structures, which were grown by a combination of molecular-beam epitaxy and off-axis magnetron sputtering, have a surface roughness of <5 A, with piezoelectric microscopy measurements revealing a piezoelectric coefficient of ∼50 pm/V that is switchable down to sub-100-nm dimensions.

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