Open AccessMicro-Raman and dielectric phase transition studies in antiferroelectric PbZrO3 thin films
Author(s) -
P. S. Dobal,
R. S. Katiyar,
S. S. N. Bharadwaja,
S. B. Krupanidhi
Publication year - 2001
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1356730
Subject(s) - antiferroelectricity , dielectric , materials science , raman scattering , raman spectroscopy , phase transition , zirconate , thin film , polarization (electrochemistry) , atmospheric temperature range , condensed matter physics , transition temperature , phase (matter) , ferroelectricity , analytical chemistry (journal) , optoelectronics , optics , chemistry , composite material , nanotechnology , titanate , thermodynamics , ceramic , physics , organic chemistry , superconductivity , chromatography
Antiferroelectric materials are found to be good alternative material compositions for high-charge-storage devices and transducer applications. Lead zirconate (PZ) is a room-temperature antiferroelectric material. The antiferroelectric nature of PZ thin films was studied over a temperature range of 24-300°C, in terms of Raman scattering, dielectric constant, and polarization. Temperature-dependent dielectric and polarization studies indicated a nonabrupt phase transition. To alleviate the extrinsic effects influencing the phase transition behavior, Raman scattering studies were done on laser-ablated PZ thin films as a function of temperature and clear phase transformations were observed.
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