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Antiferroelectric materials are found to be good alternative material compositions for high-charge-storage devices and transducer applications. Lead zirconate (PZ) is a room-temperature antiferroelectric material. The antiferroelectric nature of PZ thin films was studied over a temperature range of 24-300°C, in terms of Raman scattering, dielectric constant, and polarization. Temperature-dependent dielectric and polarization studies indicated a nonabrupt phase transition. To alleviate the extrinsic effects influencing the phase transition behavior, Raman scattering studies were done on laser-ablated PZ thin films as a function of temperature and clear phase transformations were observed.

Micro-Raman and dielectric phase transition studies in antiferroelectric PbZrO3 thin films