Open AccessElectron and trap dynamics in As-ion-implanted and annealed GaAs
Author(s) -
L. Giniūnas,
R. Danielius,
Hark Hoe Tan,
C. Jagadish,
R. Adomavičius,
A. Krotkus
Publication year - 2001
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1356727
Subject(s) - annealing (glass) , materials science , ion , ultrashort pulse , ion implantation , electron , recombination , optoelectronics , atomic physics , analytical chemistry (journal) , molecular physics , optics , chemistry , laser , physics , biochemistry , organic chemistry , chromatography , quantum mechanics , composite material , gene
This work was supported in part by the EC INCOCOPERNICUS project ‘‘DUO—devices for ultrafast optoelectronics’’ and the Lithuanian Science and Study Foundation.
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