TOF-SIMS quantification of low energy arsenic implants through thin SiO[sub 2] layers
Author(s) -
D. Gehre
Publication year - 2001
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.1354478
Subject(s) - arsenic , secondary ion mass spectrometry , ion implantation , analytical chemistry (journal) , matrix (chemical analysis) , materials science , ion , mass spectrometry , oxide , oxidation state , chemistry , metallurgy , environmental chemistry , chromatography , composite material , metal , organic chemistry
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