Open AccessHigh depth resolution Secondary Ion Mass Spectrometry (SIMS) analysis of Si[sub 1−x]Ge[sub x]:C HBT structures
Author(s) -
Shifeng Lu
Publication year - 2001
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.1354474
Subject(s) - secondary ion mass spectrometry , analytical chemistry (journal) , materials science , heterojunction bipolar transistor , heterojunction , annealing (glass) , ion implantation , auger , germanium , optoelectronics , silicon , mass spectrometry , ion , chemistry , bipolar junction transistor , transistor , atomic physics , physics , organic chemistry , chromatography , composite material , quantum mechanics , voltage
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