Open AccessGate oxide formation under mild conditions for scanning capacitance microscopy
Author(s) -
Duncan McBride
Publication year - 2001
Publication title -
aip conference proceedings
Language(s) - Uncategorized
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.1354472
Subject(s) - oxide , materials science , scanning capacitance microscopy , capacitance , silicon , gate oxide , optoelectronics , capacitor , microscopy , doping , voltage , silicon oxide , ultraviolet , analytical chemistry (journal) , scanning electron microscope , electrode , optics , electrical engineering , chemistry , transistor , composite material , scanning confocal electron microscopy , physics , chromatography , metallurgy , engineering , silicon nitride
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