Open AccessChallenges of gate-dielectric scaling, including the vertical replacement-gate MOSFET
Author(s) -
Don Monroe
Publication year - 2001
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.1354379
Subject(s) - microelectronics , transistor , silicon , mosfet , silicon on insulator , scaling , optoelectronics , gate dielectric , dielectric , materials science , electrical engineering , engineering physics , reliability (semiconductor) , quantum tunnelling , logic gate , silicon dioxide , voltage , electronic engineering , engineering , physics , power (physics) , geometry , mathematics , quantum mechanics , metallurgy
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom