Unipolar spin diodes and transistors | Zendy

Michael E. Flatté | Zendy; Giovanni Vignale | Zendy

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Unipolar spin diodes and transistors

Author(s) -

Michael E. Flatté,

Giovanni Vignale

Publication year - 2001

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1348317

Subject(s) - transistor , diode , materials science , bipolar junction transistor , ferromagnetism , optoelectronics , magnetization , condensed matter physics , spin (aerodynamics) , electrical engineering , physics , voltage , magnetic field , engineering , quantum mechanics , thermodynamics

Unipolar devices constructed from ferromagnetic semiconducting materials withvariable magnetization direction are shown theoretically to behave verysimilarly to nonmagnetic bipolar devices such as the p-n diode and the bipolar(junction) transistor. Such devices may be applicable for magnetic sensing,nonvolatile memory, and reprogrammable logic.

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