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Correlation between Si–H/D bond desorption and injected electron energy in metal–oxide–silicon tunneling diodes
Author(s) -
C.-H. Lin,
M. H. Lee,
C. W. Liu
Publication year - 2001
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1343477
Subject(s) - silicon , electron , diode , deuterium , materials science , quantum tunnelling , atomic physics , kinetic isotope effect , oxide , hydrogen , chemistry , optoelectronics , physics , organic chemistry , quantum mechanics , metallurgy

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