Open AccessReduced temperature dependence of luminescence from silicon due to field-induced carrier confinement
Author(s) -
ChingFuh Lin,
MiinJang Chen,
Eih-Zhe Liang,
W. T. Liu,
C. W. Liu
Publication year - 2001
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1339842
Subject(s) - photoluminescence , electroluminescence , impurity , luminescence , materials science , silicon , condensed matter physics , carrier lifetime , semiconductor , recombination , spontaneous emission , atomic physics , optoelectronics , chemistry , nanotechnology , optics , physics , laser , biochemistry , organic chemistry , layer (electronics) , gene
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