Open AccessControl and elimination of cracking of AlGaN using low-temperature AlGaN interlayers
Author(s) -
Jung Han,
Karen Elizabeth Waldrip,
S. R. Lee,
Jeffrey J. Figiel,
Sean Hearne,
G. A. Petersen,
S. M. Myers
Publication year - 2001
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1336812
Subject(s) - materials science , stress relaxation , cracking , optoelectronics , stress (linguistics) , wide bandgap semiconductor , relaxation (psychology) , characterization (materials science) , composite material , ultimate tensile strength , in situ , creep , nanotechnology , psychology , social psychology , philosophy , linguistics , physics , meteorology
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