Minority-carrier effects in poly-phenylenevinylene as studied by electrical characterization | Zendy

Peter Stallinga | Zendy; Henrique L. Gomes | Zendy; H. Rost | Zendy; Andrew B. Holmes | Zendy; Mark Harrison | Zendy; Richard H. Friend | Zendy

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Minority-carrier effects in poly-phenylenevinylene as studied by electrical characterization

Author(s) -

Peter Stallinga,

Henrique L. Gomes,

H. Rost,

Andrew B. Holmes,

Mark Harrison,

Richard H. Friend

Publication year - 2001

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1334634

Subject(s) - acceptor , materials science , capacitance , deep level transient spectroscopy , carrier lifetime , diffusion capacitance , silicon , analytical chemistry (journal) , admittance , optoelectronics , spectroscopy , charge carrier , condensed matter physics , chemistry , electrical engineering , electrical impedance , physics , engineering , electrode , chromatography , quantum mechanics

Electrical measurements have been performed on poly[2-methoxy, 5 ethyl (2' hexyloxy) paraphenylenevinylene] in a pn junction with silicon. These included current-voltage measurements, capacitance-voltage measurements, capacitance-transient spectroscopy, and admittance spectroscopy. The measurements show evidence for large minority-carrier injection into the polymer possibly enabled by interface states for which evidence is also found. The shallow acceptor level depth (0.12 eV) and four deep trap level activation energies (0.30 and 1.0 eV majority-carrier type; 0.48 and 1.3 eV minority-carrier type) are found. Another trap that is visible at room temperature has point-defect nature. (C) 2001 American Institute of Physics

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