Open AccessErratum: “Biexciton emission from high-quality ZnO films grown on epitaxial GaN by plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 77, 537 (2000)]
Author(s) -
H. J. Ko,
Y. F. Chen,
T. Yao,
Hiromi Miyajima,
Akio Yamamoto,
T. Goto
Publication year - 2000
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1333406
Subject(s) - molecular beam epitaxy , epitaxy , materials science , optoelectronics , plasma , wide bandgap semiconductor , nanotechnology , physics , quantum mechanics , layer (electronics)
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom