Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands | Zendy

Oliver G. Schmidt | Zendy; U. Denker | Zendy; K. Eberl | Zendy; O. Kienzle | Zendy; F. Ernst | Zendy; R. J. Haug | Zendy

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Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands

Author(s) -

Oliver G. Schmidt,

U. Denker,

K. Eberl,

O. Kienzle,

F. Ernst,

R. J. Haug

Publication year - 2000

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1332817

Subject(s) - quantum tunnelling , resonant tunneling diode , diode , resonance (particle physics) , materials science , nanostructure , silicon , thermalisation , condensed matter physics , germanium , optoelectronics , atomic physics , nanotechnology , quantum well , physics , optics , laser

Multiple layers of self-assembled Ge/Si islands are used for resonant tunneling diodes (RTDs). The extremely closely stacked Ge nanostructures form vertical channels with energetically deep thermalization layers and high Si double barriers. Two resonances are found in the RTD current–voltage curve, which are attributed to the heavy-heavy hole (hh) and heavy-light hole (lh) transition. The lh resonance shows negative differential resistance up to 50 K. With increasing magnetic field, the lh resonance slightly shifts to higher voltages.

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