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Electrical and structural properties of solid phase crystallized polycrystalline silicon and their correlation to single-electron effects
Author(s) -
Y. T. Tan,
Z. A. K. Durrani,
H. Ahmed
Publication year - 2001
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1331338
Subject(s) - materials science , silicon , polycrystalline silicon , nanowire , annealing (glass) , transmission electron microscopy , coulomb blockade , optoelectronics , semiconductor , transistor , analytical chemistry (journal) , nanotechnology , thin film transistor , layer (electronics) , chemistry , composite material , voltage , physics , quantum mechanics , chromatography
06/05/14 meb. Publisher version, OK to add

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