Open AccessHigh-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells
Author(s) -
A. Chitnis,
Ajay Kumar,
M. Shatalov,
V. Adivarahan,
A. V. Lunev,
Jie Yang,
G. Simin,
M. Asif Khan,
R. Gaška,
M. S. Shur
Publication year - 2000
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1331084
Subject(s) - light emitting diode , optoelectronics , quantum tunnelling , materials science , diode , quantum well , sapphire , depletion region , space charge , doping , charge carrier , wide bandgap semiconductor , condensed matter physics , semiconductor , optics , physics , electron , laser , quantum mechanics
We report on quaternary AlInGaN/InGaN multiple quantum well (MQW) light emitting diode structures grown on sapphire substrates. The structures demonstrate high quality of the p–n junctions with quaternary MQW. At low forward bias (below 2 V), the temperature dependent of current–voltage characteristics are exponential with the ideality factor of 2.28, which is in a good agreement with the model of the injected carrier recombination in the space charge region. This ideality factor value is approximately three times lower than for conventional GaN/InGaN light emitting diodes (LEDs). The obtained data indicate the recombination in p–n junction space charge region to be responsible for a current transport in LED structures with quaternary quantum wells. This is in contrast to InGaN based LEDs, where carrier tunneling dominates either because of high doping of the active layer or due to the high density of localized states.
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