Spectrometric characterization of amorphous silicon PIN detectors | Zendy

Antonio LeyvaPérez | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Spectrometric characterization of amorphous silicon PIN detectors

Author(s) -

Antonio LeyvaPérez

Publication year - 2000

Publication title -

aip conference proceedings

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.177

H-Index - 75

eISSN - 1551-7616

pISSN - 0094-243X

DOI - 10.1063/1.1328959

Subject(s) - diode , materials science , amorphous silicon , silicon , optoelectronics , characterization (materials science) , detector , particle detector , amorphous solid , alpha particle , plasma enhanced chemical vapor deposition , pin diode , radiation , deposition (geology) , high energy particle , optics , nanotechnology , crystalline silicon , engineering physics , physics , atomic physics , chemistry , organic chemistry , paleontology , sediment , biology

During the last years, much interest has been dedicated to the use of amorphous silicon PIN diodes as particle and radiation detectors for medical applications. This work presents the spectrometric characterization of PECVD high deposition rate diodes fabricated at our laboratory, with thickness up to 17.5 μm. Results show that the studied devices detect the Am^(241) alpha particles and the medical X-rays generated by a mammograph model Senographe 700T from General Electric. Possible reasons of the observed energy losses are discussed in the lest. Using the SRIM2000 program, the transit of 5.5 MeV alpha particles through a diode was simulated, determining the optimum thickness for these particles to deposit their energy in the intrinsic layer of the diode

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research