Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs multiple-quantum wells | Zendy

Sergey Ganichev | Zendy; Hermann Ketterl | Zendy; W. Prettl | Zendy; E. L. Ivchenko | Zendy; L. E. Vorobjev | Zendy

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Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs multiple-quantum wells

Author(s) -

Sergey Ganichev,

Hermann Ketterl,

W. Prettl,

E. L. Ivchenko,

L. E. Vorobjev

Publication year - 2000

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1326488

Subject(s) - quantum well , gallium arsenide , condensed matter physics , orientation (vector space) , materials science , spin (aerodynamics) , optoelectronics , chemistry , physics , optics , thermodynamics , mathematics , laser , geometry

The circular photogalvanic effect (CPGE) has been observed in (100)-oriented$p$-GaAs/AlGaAs quantum wells at normal incidence of far-infrared radiation. Itis shown that monopolar optical spin orientation of free carriers causes anelectric current which reverses its direction upon changing from left to rightcircularly polarized radiation. CPGE at normal incidence and the occurence ofthe linear photogalvanic effect indicate a reduced point symmetry of studiedmulti-layered heterostructures. As proposed, CPGE can be utilized toinvestigate separately spin polarization of electrons and holes and thesymmetry of quantum wells.Comment: 4 pages, 3 figure

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