Light emission from Er at the As-terminated Si(111) surface | Zendy

Paul G. Evans | Zendy; J. A. Golovchenko | Zendy

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Light emission from Er at the As-terminated Si(111) surface

Author(s) -

Paul G. Evans,

J. A. Golovchenko

Publication year - 2000

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1315335

Subject(s) - materials science , light emission , erbium , recombination , wavelength , ion , oxygen , emission intensity , deposition (geology) , luminescence , atomic physics , doping , analytical chemistry (journal) , chemistry , optoelectronics , physics , paleontology , biochemistry , organic chemistry , sediment , biology , gene , chromatography

Erbium atoms at an arsenic-terminated Si(111) surface can be made to emit light at the 1.55 μm wavelength associated with an internal transition in the Er3+ ion. The As-terminated surface prepared under ultrahigh vacuum conditions has a surface recombination velocity of 50 cm s−1 and partially suppresses competing nonradiative recombination mechanisms. Following the deposition of Er, its characteristic light emission is observed only after oxygen reacts with the surface. The intensity of the light emitted by Er increases significantly upon cooling from 310 to 215 K. No light emission was observed from Er atoms deposited on 7×7 or H-terminated surfaces.

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