A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells | Zendy

Lap Van Dao | Zendy; M. Ga�l | Zendy; C. Carmody | Zendy; Hark Hoe Tan | Zendy; C. Jagadish | Zendy

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A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells

Author(s) -

Lap Van Dao,

M. Ga�l,

C. Carmody,

Hark Hoe Tan,

C. Jagadish

Publication year - 2000

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1314904

Subject(s) - quantum well , impurity , photoluminescence , ion implantation , ion , relaxation (psychology) , free carrier , materials science , gallium arsenide , condensed matter physics , optoelectronics , chemistry , optics , physics , social psychology , laser , psychology , organic chemistry

We have compared the time integrated photoluminescence (PL) and the time resolved PL of several lattice matched InGaAs/InP quantum wells intermixed either by ion implantation or an impurity-free method. We have found that the carrier capture rates into quantum wells and carrier relaxation from the wells depend on the type of intermixing used. Our results indicate that the carrier lifetimes are significantly longer in samples intermixed by the impurity-free methods, while the carrier collection efficiency of the quantum wells is more efficient in samples intermixed by ion implantation.

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