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Determination of thickness and optical constants of amorphous silicon films from transmittance data
Author(s) -
Marcelo Mulato,
I. Chambouleyron,
E. G. Birgin,
J. M. Martı́nez
Publication year - 2000
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1314299
Subject(s) - transmittance , amorphous silicon , materials science , silicon , thin film , amorphous solid , optics , optoelectronics , nanotechnology , crystalline silicon , chemistry , crystallography , physics
This work presents the application of a recently developed numerical method to determine the thickness and the optical constants of thin films using experimental transmittance data only. This method may be applied to films not displaying a fringe pattern and is shown to work for a-Si:H (hydrogenated amorphous silicon) layers as thin as 100 nm. The performance and limitations of the method are discussed on the basis of experiments performed on a series of six a-Si:H samples grown under identical conditions, but with thickness varying from 98 nm to 1.2 mu m. (C) 2000 American Institute of Physics. [S0003-6951(00)02540-7]

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