Mechanism for pillar-shaped surface morphology of polysilicon prepared by excimer laser annealing | Zendy

An Shih | Zendy; Chao-Yu Meng | Zendy; SiChen Lee | Zendy; Ming-Yau Chern | Zendy

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Mechanism for pillar-shaped surface morphology of polysilicon prepared by excimer laser annealing

Author(s) -

An Shih,

Chao-Yu Meng,

SiChen Lee,

Ming-Yau Chern

Publication year - 2000

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1288784

Subject(s) - materials science , amorphous solid , annealing (glass) , silicon , excimer laser , polycrystalline silicon , laser , amorphous silicon , crystallite , irradiation , thin film , optoelectronics , composite material , nanotechnology , optics , crystalline silicon , crystallography , layer (electronics) , chemistry , metallurgy , thin film transistor , physics , nuclear physics

Surface morphology of polycrystalline silicon prepared by excimer laser annealing has been investigated. It was found that when a thin amorphous Si film is irradiated by excimer laser, pillars are formed on the surface of the crystallized polysilicon. To find out the mechanism, various preparation parameters such as laser power densities, shot numbers and the thickness of the amorphous Si have been studied. Several intermediate patterns have been found which illustrate the sequential formation of pillars. A surface tension model is proposed to explain these patterns. This mechanism can be applied to prepare the self-assembled silicon quantum dots, whose average size and height are 14.2 and 3.7 nm, respectively.

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