Retention and switching kinetics of protonated gate field-effect transistors | Zendy

R. A. B. Devine | Zendy; Gilbert V. Herrera | Zendy

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Retention and switching kinetics of protonated gate field-effect transistors

Author(s) -

R. A. B. Devine,

Gilbert V. Herrera

Publication year - 2000

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1287126

Subject(s) - gate oxide , field effect transistor , oxide , materials science , transistor , time dependent gate oxide breakdown , optoelectronics , substrate (aquarium) , electrode , non volatile memory , metal , protonation , metal gate , mosfet , analytical chemistry (journal) , chemistry , electrical engineering , voltage , ion , metallurgy , oceanography , organic chemistry , chromatography , geology , engineering

The switching and memory retention time has been measured in 50 {micro}m gatelength pseudo-non-volatile memory MOSFETs containing, protonated 40 nm gate oxides. Times of the order of 3.3 seconds are observed for fields of 3 MV cm{sup {minus}1}. The retention time with protons placed either at the gate oxide/substrate or gate oxide/gate electrode interfaces is found to better than 96% after 5,000 seconds. Measurement of the time dependence of the source-drain current during switching provides clear evidence for the presence of dispersive proton transport through the gate oxide

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