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3 pages, 2 figures.-- PACS: 81.05.Ea; 68.35.Dv;\ud68.55.Jk; 68.60.BsIn segregation effects during InAs growth on GaAs(001) and critical thickness for InAs self-assembled quantum dots are studied using a real time, in situ technique capable of measuring accumulated stress during growth. Due to a large (~50%) surface In segregation of floating In, self-assembled dot formation takes place when less than one monolayer of InAs is pseudomorphically grown on GaAs. A picture of the growth process is discussed on the basis of the equilibrium between InAs and floating In dominated by the stress energy.Peer reviewe

Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001)