Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001) | Zendy

J. M. Garcı́a | Zendy; J. P. Silveira | Zendy; F. Briones | Zendy

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Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001)

Author(s) -

J. M. Garcı́a,

J. P. Silveira,

F. Briones

Publication year - 2000

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.126992

Subject(s) - quantum dot , monolayer , materials science , stress relaxation , relaxation (psychology) , gallium arsenide , strain (injury) , condensed matter physics , self assembly , surface energy , photoluminescence , optoelectronics , nanotechnology , chemical physics , chemistry , physics , composite material , medicine , psychology , social psychology , creep

3 pages, 2 figures.-- PACS: 81.05.Ea; 68.35.Dv;\ud68.55.Jk; 68.60.BsIn segregation effects during InAs growth on GaAs(001) and critical thickness for InAs self-assembled quantum dots are studied using a real time, in situ technique capable of measuring accumulated stress during growth. Due to a large (~50%) surface In segregation of floating In, self-assembled dot formation takes place when less than one monolayer of InAs is pseudomorphically grown on GaAs. A picture of the growth process is discussed on the basis of the equilibrium between InAs and floating In dominated by the stress energy.Peer reviewe

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