Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen | Zendy

S. R. Kurtz | Zendy; Andrew A. Allerman | Zendy; C. H. Seager | Zendy; R. M. Sieg | Zendy; E. D. Jones | Zendy

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Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen

Author(s) -

S. R. Kurtz,

Andrew A. Allerman,

C. H. Seager,

R. M. Sieg,

E. D. Jones

Publication year - 2000

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.126989

Subject(s) - photoconductivity , electron mobility , materials science , diffusion , doping , condensed matter physics , hall effect , enhanced data rates for gsm evolution , carrier lifetime , electron , mean free path , semiconductor , optoelectronics , electrical resistivity and conductivity , silicon , physics , telecommunications , quantum mechanics , computer science , thermodynamics

Electron and hole transport in compensated, InGaAsN ({approx} 2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and doping dependent, thermally activated Hall mobilities reveal a broad distribution of localized states. At this stage of development, lateral carrier transport appears to be limited by large scale (>> mean free path) material inhomogeneities, not a random alloy-induced mobility edge

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