Open AccessSynthesis and properties of epitaxial thin films of c-axis oriented metastable four-layered hexagonal BaRuO3
Author(s) -
MinKu Lee,
ChangBeom Eom,
Wei Tian,
Xiaoqing Pan,
M. C. Smoak,
F. Tsui,
J. J. Krajewski
Publication year - 2000
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.126977
Subject(s) - materials science , scanning tunneling microscope , epitaxy , transmission electron microscopy , thin film , sputtering , metastability , crystallography , substrate (aquarium) , condensed matter physics , electrical resistivity and conductivity , nanotechnology , chemistry , layer (electronics) , oceanography , physics , organic chemistry , engineering , geology , electrical engineering
We have grown epitaxial thin films of c-axis oriented metastable four-layered hexagonal BaRuO3BaRuO3 on a (111) SrTiO3SrTiO3 substrate by 90° off-axis sputtering techniques. X-ray diffraction and transmission electron microscopy reveal that the films are single domains of c-axis four-layered hexagonal structures with an in-plane epitaxial arrangement of BaRuO3BaRuO3 [20]∥SrTiO3[110].[21̄1̄0]∥SrTiO3[110]. Surfaces with smooth terraces having a step height of a half unit cell (∼4.7 Å) have been observed by scanning tunneling microscopy. The in-plane electrical resistivity of the films is metallic, with a room temperature value of 810 μΩ cm and slightly curved temperature dependence. Their magnetic susceptibility is Pauli paramagnetic. The metastable layered metallic oxide can be used for understanding new solid-state phenomena and device applications. © 2000 American Institute of Physics
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