Open AccessEffect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors
Author(s) -
C. Monier,
S. J. Pearton,
P.C. Chang,
Albert G. Baca,
F. Ren
Publication year - 2000
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.126541
Subject(s) - materials science , optoelectronics , heterojunction , bipolar junction transistor , heterojunction bipolar transistor , doping , diffusion , wide bandgap semiconductor , transistor , acceptor , limiting , electrical resistivity and conductivity , condensed matter physics , voltage , electrical engineering , physics , mechanical engineering , thermodynamics , engineering
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