Open AccessInGaAsN/AlGaAs P-n-p heterojunction bipolar transistor
Author(s) -
P.C. Chang,
Albert G. Baca,
N. Y. Li,
Paul Sharps,
H.Q. Hou,
J. R. LaRoche,
F. Ren
Publication year - 2000
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.126476
Subject(s) - heterojunction bipolar transistor , heterojunction , optoelectronics , valence band , materials science , bipolar junction transistor , epitaxy , conduction band , band offset , band gap , gallium arsenide , transistor , vapor phase , voltage , electrical engineering , nanotechnology , electron , physics , layer (electronics) , quantum mechanics , thermodynamics , engineering
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